1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS

Haruichi Kanaya; Kohei Tasaki; Ryo Takigawa

doi:10.1109/RFIT49453.2020.9226205

1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS

Haruichi Kanaya, Kohei Tasaki, Ryo Takigawa

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper presents a design of an one-sided directional slot antenna for 1THz frequency rage future telecommunication applications. The antenna was realized on the 45 nm SOI CMOS technology. The antenna was composed of the top antenna layer, thin dielectric inter layer and bottom floating metal layer. To enhance the bandwidth, 12 array antenna was designed which has 6.2 dBi antenna gain and 250GHz 3dB bandwidth at 1 THz in simulation.

Original language	English
Title of host publication	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	166-168
Number of pages	3
ISBN (Electronic)	9781728165066
DOIs	https://doi.org/10.1109/RFIT49453.2020.9226205
Publication status	Published - Sept 2020
Event	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 - Hiroshima, Japan Duration: Sept 2 2020 → Sept 4 2020

Publication series

Name	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020

Conference

Conference	2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Country/Territory	Japan
City	Hiroshima
Period	9/2/20 → 9/4/20

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Radiation

Access to Document

10.1109/RFIT49453.2020.9226205

Cite this

Kanaya, H., Tasaki, K., & Takigawa, R. (2020). 1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS. In 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 (pp. 166-168). Article 9226205 (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT49453.2020.9226205

1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS. / Kanaya, Haruichi; Tasaki, Kohei; Takigawa, Ryo.
2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 166-168 9226205 (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kanaya, H, Tasaki, K & Takigawa, R 2020, 1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS. in 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020., 9226205, 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, Institute of Electrical and Electronics Engineers Inc., pp. 166-168, 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020, Hiroshima, Japan, 9/2/20. https://doi.org/10.1109/RFIT49453.2020.9226205

Kanaya H, Tasaki K, Takigawa R. 1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS. In 2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 166-168. 9226205. (2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020). doi: 10.1109/RFIT49453.2020.9226205

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abstract = "This paper presents a design of an one-sided directional slot antenna for 1THz frequency rage future telecommunication applications. The antenna was realized on the 45 nm SOI CMOS technology. The antenna was composed of the top antenna layer, thin dielectric inter layer and bottom floating metal layer. To enhance the bandwidth, 12 array antenna was designed which has 6.2 dBi antenna gain and 250GHz 3dB bandwidth at 1 THz in simulation.",

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1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS

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