0 - 56GHz GaAs MESFET gate-line-division distributed baseband amplifier IC with 3D transmission lines

S. Kimura; Y. Imai; S. Yamaguchi; K. Onodera

doi:10.1049/el:19970017

0 - 56GHz GaAs MESFET gate-line-division distributed baseband amplifier IC with 3D transmission lines

S. Kimura, Y. Imai, S. Yamaguchi, K. Onodera

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A GaAs MESFET distributed baseband amplifier IC that uses a gate-line-division technique and 3D transmission lines is described. The amplifier IC has S₁₁ < -13dB and S₂₁ of 11.7dB in the 0 - 56GHz band. This is the widest band of all reported GaAs MESFET baseband amplifier ICs.

Original language	English
Pages (from-to)	93-95
Number of pages	3
Journal	Electronics Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1049/el:19970017
Publication status	Published - Jan 2 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19970017

Cite this

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title = "0 - 56GHz GaAs MESFET gate-line-division distributed baseband amplifier IC with 3D transmission lines",

abstract = "A GaAs MESFET distributed baseband amplifier IC that uses a gate-line-division technique and 3D transmission lines is described. The amplifier IC has S11 < -13dB and S21 of 11.7dB in the 0 - 56GHz band. This is the widest band of all reported GaAs MESFET baseband amplifier ICs.",

author = "S. Kimura and Y. Imai and S. Yamaguchi and K. Onodera",

year = "1997",

month = jan,

day = "2",

doi = "10.1049/el:19970017",

language = "English",

volume = "33",

pages = "93--95",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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T1 - 0 - 56GHz GaAs MESFET gate-line-division distributed baseband amplifier IC with 3D transmission lines

AU - Kimura, S.

AU - Imai, Y.

AU - Yamaguchi, S.

AU - Onodera, K.

PY - 1997/1/2

Y1 - 1997/1/2

N2 - A GaAs MESFET distributed baseband amplifier IC that uses a gate-line-division technique and 3D transmission lines is described. The amplifier IC has S11 < -13dB and S21 of 11.7dB in the 0 - 56GHz band. This is the widest band of all reported GaAs MESFET baseband amplifier ICs.

AB - A GaAs MESFET distributed baseband amplifier IC that uses a gate-line-division technique and 3D transmission lines is described. The amplifier IC has S11 < -13dB and S21 of 11.7dB in the 0 - 56GHz band. This is the widest band of all reported GaAs MESFET baseband amplifier ICs.

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U2 - 10.1049/el:19970017

DO - 10.1049/el:19970017

M3 - Article

AN - SCOPUS:0031546387

SN - 0013-5194

VL - 33

SP - 93

EP - 95

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

0 - 56GHz GaAs MESFET gate-line-division distributed baseband amplifier IC with 3D transmission lines

Abstract

All Science Journal Classification (ASJC) codes

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