Abstract
In order to secure the certain operation of MEMS devices, it is very important to design a hermetically sealed package which protects the device from wet environments, taking into account the reliability of cap bonding of MEMS packages. Anodic bonding is a popular cap bonding method. In this process, glass and single crystal silicon are bonded at high temperature under high voltage conditions. In this study, the new production method of device size specimen with an interface crack by wafer process is proposed. And an attempt is made to establish a method of testing the cap bonding strength of packages and to make clear the interface strength of anodic bonding between the glass and single crystal silicon.
| Translated title of the contribution | Bonding Strength Evaluation for Hermetic Seal of MEMS Package |
|---|---|
| Original language | Japanese |
| Pages (from-to) | 926-931 |
| Number of pages | 6 |
| Journal | Zairyo/Journal of the Society of Materials Science, Japan |
| Volume | 56 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2007 |